Справочник по полевым транзисторам. Datasheet на транзистор IRF840


ТранзисторIRF840
ТипN
Vds, V500
Vgs, V20.0
Idr, A8.00000
Idm, A32.0
Eas,mJ510.0
Ear,mJ13.0
dV/dt,V/ns3.50
P, W125.000
t min, °C-55
t max, °C150
Rth, C0.500
Rds, Ohm0.85000
Ciss, pF1300.0
Coss, pF310.0
Crss, pF120.000
Qg, nC63.00
Qgs, nC9.30
Qgd, nC32.00
t on, nS14.00
t rise,ns23.00
t off,ns49.00
t fall,ns20.00
t rr, nS460.0
Возможные корпусаTO-220,TO-220AB
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
  • APEC(Advanced Power Electronics Corp.) (http://www.a-power.com.tw)
  • International Rectifier (http://www.irf.com)
  • Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
  • FairChild (Samsung) (http://www.fairchildsemi.com)
  • STMicroelectronics (http://www.st.com)
  • Motorola ()
  • CJ-Elec (http://www.cj-elec.com)
  • HFZT Electronic co. (http://hfzt.net)
  • Others ()
  • COMSET Semiconductor (http://comsetsemi.com)
  • GSME (http://www.gsme.com.cn)
  • Foshan Blue Rocket Electronics (http://www.fsbrec.com)
  • Shaanxi Qunli Electric Co., Ltd (http://www.bcrelays.com)
IRF840 Datasheet Vishay (Siliconix,General Semiconductor)
IRF840 Datasheet FairChild (Samsung)
IRF840 Datasheet STMicroelectronics
IRF840 Datasheet FairChild (Samsung)