| Транзистор | IRF820 |
| Тип | N |
| Vds, V | 500 |
| Vgs, V | 20.0 |
| Idr, A | 2.50000 |
| Idm, A | |
| Eas,mJ | |
| Ear,mJ | |
| dV/dt,V/ns | |
| P, W | 50.000 |
| t min, °C | |
| t max, °C | |
| Rth, C | 0.000 |
| Rds, Ohm | 3.00000 |
| Ciss, pF | 315.0 |
| Coss, pF | |
| Crss, pF | |
| Qg, nC | 24.00 |
| Qgs, nC | 3.30 |
| Qgd, nC | 13.00 |
| t on, nS | |
| t rise,ns | |
| t off,ns | |
| t fall,ns | |
| t rr, nS | |
| Возможные корпуса | TO-220AB | | Производитель | - Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- Motorola ()
- Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
- STMicroelectronics (http://www.st.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
- Shaanxi Qunli Electric Co., Ltd (http://www.bcrelays.com)
| | |
