Транзистор | IRF830 |
Тип | N |
Vds, V | 500 |
Vgs, V | 20.0 |
Idr, A | 4.50000 |
Idm, A | 18.0 |
Eas,mJ | 290.0 |
Ear,mJ | 7.4 |
dV/dt,V/ns | 3.50 |
P, W | 100.000 |
t min, °C | -65 |
t max, °C | 150 |
Rth, C | 1.250 |
Rds, Ohm | 1.35000 |
Ciss, pF | 610.0 |
Coss, pF | 120.0 |
Crss, pF | 10.000 |
Qg, nC | 22.00 |
Qgs, nC | 7.20 |
Qgd, nC | 8.00 |
t on, nS | 11.50 |
t rise,ns | 8.00 |
t off,ns | 7.00 |
t fall,ns | 5.00 |
t rr, nS | 435.0 |
Возможные корпуса | TO-220AB | Производитель | - Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- APEC(Advanced Power Electronics Corp.) (http://www.a-power.com.tw)
- STMicroelectronics (http://www.st.com)
- Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
- FairChild (Samsung) (http://www.fairchildsemi.com)
- Others ()
- HFZT Electronic co. (http://hfzt.net)
- CJ-Elec (http://www.cj-elec.com)
- Silikron (http://www.silikron.com)
- COMSET Semiconductor (http://comsetsemi.com)
- GSME (http://www.gsme.com.cn)
- Foshan Blue Rocket Electronics (http://www.fsbrec.com)
| | |