Справочник по полевым транзисторам. Datasheet на транзистор IRF830


ТранзисторIRF830
ТипN
Vds, V500
Vgs, V20.0
Idr, A4.50000
Idm, A18.0
Eas,mJ290.0
Ear,mJ7.4
dV/dt,V/ns3.50
P, W100.000
t min, °C-65
t max, °C150
Rth, C1.250
Rds, Ohm1.35000
Ciss, pF610.0
Coss, pF120.0
Crss, pF10.000
Qg, nC22.00
Qgs, nC7.20
Qgd, nC8.00
t on, nS11.50
t rise,ns8.00
t off,ns7.00
t fall,ns5.00
t rr, nS435.0
Возможные корпусаTO-220AB
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
  • APEC(Advanced Power Electronics Corp.) (http://www.a-power.com.tw)
  • STMicroelectronics (http://www.st.com)
  • Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
  • FairChild (Samsung) (http://www.fairchildsemi.com)
  • Others ()
  • HFZT Electronic co. (http://hfzt.net)
  • CJ-Elec (http://www.cj-elec.com)
  • Silikron (http://www.silikron.com)
  • COMSET Semiconductor (http://comsetsemi.com)
  • GSME (http://www.gsme.com.cn)
  • Foshan Blue Rocket Electronics (http://www.fsbrec.com)
IRF830 Datasheet Vishay (Siliconix,General Semiconductor)
IRF830 Datasheet FairChild (Samsung)