| Транзистор | IRFB9N60A |
| Тип | N |
| Vds, V | 600 |
| Vgs, V | 30.0 |
| Idr, A | 9.20000 |
| Idm, A | |
| Eas,mJ | 290.0 |
| Ear,mJ | 17.0 |
| dV/dt,V/ns | 5.00 |
| P, W | 170.000 |
| t min, °C | |
| t max, °C | |
| Rth, C | 0.750 |
| Rds, Ohm | 0.75000 |
| Ciss, pF | 1400.0 |
| Coss, pF | 180.0 |
| Crss, pF | 7.100 |
| Qg, nC | 49.00 |
| Qgs, nC | 13.00 |
| Qgd, nC | 20.00 |
| t on, nS | 13.00 |
| t rise,ns | 25.00 |
| t off,ns | 30.00 |
| t fall,ns | 22.00 |
| t rr, nS | 530.0 |
| Возможные корпуса | TO-220AB,TO-220 | | Производитель | - Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- International Rectifier (http://www.irf.com)
- Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
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