| Транзистор | IRFBE20 |
| Тип | N |
| Vds, V | 800 |
| Vgs, V | 20.0 |
| Idr, A | 1.80000 |
| Idm, A | |
| Eas,mJ | 180.0 |
| Ear,mJ | 5.4 |
| dV/dt,V/ns | 2.00 |
| P, W | 54.000 |
| t min, °C | |
| t max, °C | |
| Rth, C | 2.300 |
| Rds, Ohm | 6.50000 |
| Ciss, pF | 530.0 |
| Coss, pF | 150.0 |
| Crss, pF | 90.000 |
| Qg, nC | 38.00 |
| Qgs, nC | 5.00 |
| Qgd, nC | 21.00 |
| t on, nS | 8.20 |
| t rise,ns | 17.00 |
| t off,ns | 58.00 |
| t fall,ns | 27.00 |
| t rr, nS | 380.0 |
| Возможные корпуса | TO-220AB | | Производитель | - Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- International Rectifier (http://www.irf.com)
- Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
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