| Транзистор | IRFBE30 |
| Тип | N |
| Vds, V | 800 |
| Vgs, V | 20.0 |
| Idr, A | 4.10000 |
| Idm, A | |
| Eas,mJ | 260.0 |
| Ear,mJ | 13.0 |
| dV/dt,V/ns | 2.00 |
| P, W | 125.000 |
| t min, °C | |
| t max, °C | |
| Rth, C | 1.000 |
| Rds, Ohm | 3.00000 |
| Ciss, pF | 1300.0 |
| Coss, pF | 310.0 |
| Crss, pF | 190.000 |
| Qg, nC | 78.00 |
| Qgs, nC | 9.60 |
| Qgd, nC | 45.00 |
| t on, nS | 12.00 |
| t rise,ns | 33.00 |
| t off,ns | 82.00 |
| t fall,ns | 30.00 |
| t rr, nS | 480.0 |
| Возможные корпуса | TO-220AB,TO-220 | | Производитель | - Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
- International Rectifier (http://www.irf.com)
- Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
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