Справочник по полевым транзисторам. Datasheet на транзистор IRFBG30


ТранзисторIRFBG30
ТипN
Vds, V1000
Vgs, V20.0
Idr, A3.10000
Idm, A
Eas,mJ280.0
Ear,mJ13.0
dV/dt,V/ns1.00
P, W125.000
t min, °C
t max, °C
Rth, C1.000
Rds, Ohm5.00000
Ciss, pF980.0
Coss, pF140.0
Crss, pF50.000
Qg, nC80.00
Qgs, nC10.00
Qgd, nC42.00
t on, nS12.00
t rise,ns25.00
t off,ns89.00
t fall,ns29.00
t rr, nS410.0
Возможные корпусаTO-220AB,TO-220
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
  • Others ()
  • Semiconductor Technology, Inc. (http://www.semi-tech-inc.com)
IRFBG30 Datasheet Vishay (Siliconix,General Semiconductor)