Справочник по полевым транзисторам. Datasheet на транзистор SQJ412EP


ТранзисторSQJ412EP
ТипN
Vds, V40
Vgs, V20.0
Idr, A32.00000
Idm, A128.0
Eas,mJ140.0
Ear,mJ
dV/dt,V/ns
P, W83.000
t min, °C-55
t max, °C175
Rth, C1.800
Rds, Ohm0.00350
Ciss, pF4950.0
Coss, pF630.0
Crss, pF270.000
Qg, nC80.00
Qgs, nC13.10
Qgd, nC12.30
t on, nS45.00
t rise,ns150.00
t off,ns50.00
t fall,ns55.00
t rr, nS
Возможные корпусаSOT-669,SO-8
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SQJ412EP Datasheet Vishay (Siliconix,General Semiconductor)