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Транзистор	PDF	Тип	Vce, V	Vge,V	Ic, A	Ic max, A	P, W	t min,C	t max,C	Rth,C	Vce sat. V	Cies,pF	Coes,pF	Cres,pF	t on, nS	t rise, nS	t off, nS	t fall, nS	Eon,mJ	Eoff,mJ	Etot,mJ	Qg, nC	Qgc,nC	Qge,nC	t rr,nS	Qrr, nC	Возможные корпуса
IGC54T65R3QE		-	650.0		100.000				175		2.22																Chip
IGC54T65T8RM		-	650.0		100.000				175		1.82																Chip
IGC70T120T6RL		Single	1200.0	20.0	75.000	225.0		-40	175		1.85	4400.0	290.0	235.0
IGC70T120T6RM		Single	1200.0	20.0	75.000	225.0		-40	175		1.85	4400.0	290.0	235.0
IGC70T120T8RL		-	1200.0		75.000				175		2.07																Chip
IGC70T120T8RM		-	1200.0		75.000				175		2.07																Chip
IGC70T120T8RQ		-	1200.0		75.000				175		2.42																Chip
IGC76T65T8RM		-	650.0		150.000				175		1.23																Chip
IGC82T170S8RM		-	1700.0		70.000				150		2.20																Chip
IGC89T170S8RM		-	1700.0		75.000				150		2.20																Chip
IGC99T120T6RH		Single	1200.0	20.0	100.000	300.0		-40	175		1.70	6150.0	405.0	345.0		175.00
IGC99T120T6RL		Single	1200.0	20.0	100.000	300.0		-40	175		1.80	6150.0	405.0	345.0
IGC99T120T6RM		Single	1200.0	20.0	100.000	300.0		-40	175		1.80	6150.0	405.0	345.0
IGC99T120T8RH		-	1200.0		100.000				175		1.92																Chip
IGC99T120T8RL		-	1200.0		100.000				175		1.97																Chip
IGC99T120T8RM		-	1200.0		100.000				175		1.97																Chip
IGC99T120T8RQ		-	1200.0		100.000				175		2.42																Chip
IGD01N120H2		Single	1200.0	20.0	3.200	3.5	28.000	-40	150	4.50	2.20	91.6	9.8	3.4	13.00	6.30	370.00	28.00	0.080	0.060	0.140	8.6					TO-252
IGD06N60T		Single	600.0	20.0	12.000	18.0	88.000	-40	175	1.70	1.50	368.0	28.0	11.0	9.00	6.00	130.00	58.00	0.090	0.110	0.200	42.0					TO-252
IGP01N120H2		Single	1200.0	20.0	3.200	3.5	28.000	-40	150	4.50	2.20	91.6	9.8	3.4	13.00	6.30	370.00	28.00	0.080	0.060	0.140	8.6					TO-220