Справочник по полевым транзисторам. Datasheet на транзистор SIRA02DP-T1-GE3


ТранзисторSIRA02DP-T1-GE3
ТипN
Vds, V30
Vgs, V16.0
Idr, A50.00000
Idm, A100.0
Eas,mJ45.0
Ear,mJ
dV/dt,V/ns
P, W71.400
t min, °C-55
t max, °C150
Rth, C1.400
Rds, Ohm0.00165
Ciss, pF6150.0
Coss, pF1615.0
Crss, pF141.000
Qg, nC34.30
Qgs, nC13.60
Qgd, nC4.10
t on, nS16.00
t rise,ns10.00
t off,ns42.00
t fall,ns8.00
t rr, nS51.0
Возможные корпусаSOT-669
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
SIRA02DP-T1-GE3 Datasheet Vishay (Siliconix,General Semiconductor)