Справочник по полевым транзисторам. Datasheet на транзистор IPB65R660CFD


ТранзисторIPB65R660CFD
ТипN
Vds, V650
Vgs, V20.0
Idr, A6.00000
Idm, A17.0
Eas,mJ115.0
Ear,mJ0.2
dV/dt,V/ns50.00
P, W62.500
t min, °C-55
t max, °C150
Rth, C2.000
Rds, Ohm0.59400
Ciss, pF615.0
Coss, pF33.0
Crss, pF
Qg, nC22.00
Qgs, nC3.50
Qgd, nC12.00
t on, nS9.00
t rise,ns8.00
t off,ns40.00
t fall,ns10.00
t rr, nS65.0
Возможные корпусаTO-263
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IPB65R660CFD Datasheet Infineon (Siemens)