Диод PDF Тип V, V I, A Imax, A trr, nS C, pF f, Hz Vf, V P, W Ir, mkA t fr,nS t min,C t max,C Rth,C Eas,mJ dV/dt,nS Возможные корпуса
1N5809Silicon100.06.000125.00030.0045.000.8755.00015.00-65175100.00DO-204AP,Digi-A,Chip
1N5809CBSilicon100.06.000125.00030.0045.000.8755.000-6517522.00
1N5809CBUSSilicon100.06.000125.00030.0045.000.8755.000-6517522.00
1N5809USSilicon100.06.000125.00030.0045.000.8755.000-6517522.00DO-214AA
1N5810Silicon125.06.000125.00030.0045.000.8755.00015.00-65175100.00Chip,DO-204AP,Digi-A
1N5811Silicon150.06.000125.00030.0045.000.8755.00015.00-65175100.00Digi-A,Chip,DO-204AP
1N5811CBSilicon150.06.000125.00030.0045.000.8755.000-6517522.00
1N5811CBUSSilicon150.06.000125.00030.0045.000.8755.000-6517522.00
1N5811USSilicon150.06.000125.00030.0045.000.8755.000-6517522.00DO-214AA
1N5812Silicon50.020.000250.00035.00200.000.87510.00015.00-651751.50DO-203AA
1N5812HCESilicon50.020.000400.00035.00300.000.95010.000-651751.50Chip
1N5812KCESilicon50.020.000400.00035.00300.000.95010.000-651751.50Chip
1N5812RSilicon50.020.000250.00035.00200.000.87510.00015.00-651751.50DO-203AA
1N5813Silicon75.020.000250.00035.00200.000.87510.00015.00-651751.50DO-203AA
1N5813RSilicon75.020.000250.00035.00200.000.87510.00015.00-651751.50DO-203AA
1N5814Silicon100.020.000250.00035.00200.000.87510.00015.00-651751.50DO-203AA
1N5814HCESilicon100.020.000400.00035.00300.000.95010.000-651751.50Chip
1N5814KCESilicon100.020.000400.00035.00300.000.95010.000-651751.50Chip