Транзистор PDF Тип Vce, V Vge,V Ic, A Ic max, A P, W t min,C t max,C Rth,C Vce sat. V Cies,pF Coes,pF Cres,pF t on, nS t rise, nS t off, nS t fall, nS Eon,mJ Eoff,mJ Etot,mJ Qg, nC Qgc,nC Qge,nC t rr,nS Qrr, nC Возможные корпуса
SIGC81T120R2CSingle1200.020.050.000150.0-551502.503300.0500.0220.056.0070.00
SIGC81T120R2CLSingle1200.020.050.000150.0-551502.203300.0210.060.0050.00300.0070.00
SIGC81T120R2CSSingle1200.020.050.000150.0-551503.203300.0500.0220.060.0050.00400.0060.00Chip
SIGC81T60NCSingle600.020.0100.000300.0-551502.104300.0400.095.0030.00200.0035.00
SIGC81T60SNCSingle600.020.0100.000300.0-551502.105430.0508.0312.065.0050.00450.0090.00Chip
SIGC84T120R3Single1200.020.075.000225.0-551501.705345.0280.0242.0285.0045.00520.0090.00
SIGC84T120R3E-1200.075.0001502.10Chip
SIGC84T120R3LSingle1200.020.075.000225.0-551501.705345.0242.050.0090.00Chip
SIGC84T120R3LE-1200.075.0001502.10Chip
SII100N06-600.0130.0000.281.952.90010.0
SII100N12-1200.0145.0000.182.5011.00080.0
SII100N12L -1200.0150.0000.162.5012.00080.0
SII150N06-600.0180.0000.211.954.60025.0
SII150N12-1200.0210.0000.102.5017.000100.0
SII200N06-600.0230.0000.171.956.30043.0
SII200N12-1200.0290.0000.092.5026.00080.0
SII300N06-600.0375.0000.101.9511.00069.0
SII50N06-600.075.0000.441.951.0009.0
SII50N12-1200.078.0000.302.505.00056.0
SII75N06-600.0100.0000.351.952.40022.0