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Транзистор	PDF	Тип	Vds, V	Vgs, V	Idr, A	Idm, A	Eas,mJ	Ear,mJ	dV/dt,V/ns	P, W	t min, °C	t max, °C	Rth, C	Rds, Ohm	Ciss, pF	Coss, pF	Crss, pF	Qg, nC	Qgs, nC	Qgd, nC	t on, nS	t rise,ns	t off,ns	t fall,ns	t rr, nS	Возможные корпуса
SI4913DY		P	20	8.0	9.40000					2.000			0.000	0.01500			43.00	7.10	10.90							SO-8
SI4914BDY		N	30	20.0	8.40000					2.700			0.000	0.02100			6.70	2.80	2.00							SO-8
SI4916DY		N	30	20.0	10.50000					3.500			0.000	0.01800			8.90	3.40	2.30							SO-8
SI4925DDY		P	30	20.0	8.00000					5.000			0.000	0.02900			15.00	4.00	7.50							SO-8
SI4931DY		P	12	8.0	8.90000					2.000			0.000	0.01800			34.50	5.10	9.60							SO-8
SI4936CDY		N	30	20.0	5.80000					2.300			0.000	0.04000			2.80	1.10	0.80							SO-8
SI4943CDY		P	20	20.0	8.00000					3.100			0.000	0.01920			20.00	7.00	9.00							SO-8
SI4946BEY		N	60	20.0	6.50000					3.700			0.000	0.04100			9.20	3.30	3.70							SO-8
SI4948BEY		P	60	20.0	3.10000					2.400			0.000	0.12000			7.50	2.20	3.70							SO-8
SI4953ADY		P	30	20.0	4.90000					2.000			0.000	0.05300			7.00	4.00	2.00							SO-8
SI4992EY		N * 2	75	20.0	4.80000	20.0	3.2			1.400	-55	175	50.000	0.03900			14.00	2.40	3.50	7.00	10.00	22.00	10.00		25.0	SO-8
SI5401DC-T1-E3		P	20	1.0	5.20000					1.300			0.000	0.03200			25.00									DFN3x2
SI5401DC-T1-GE3		P	20	1.0	5.20000					1.300			0.000	0.03200			25.00									DFN3x2
SI5402BDC		N	30	20.0	6.70000					2.500			0.000	0.03500			4.50	1.90	1.60							ChipFET,DFN3x2
SI5402BDC-T1-E3		N	30	3.0	4.90000					1.300			0.000	0.03500			20.00									DFN3x2
SI5402BDC-T1-GE3		N	30	3.0	4.90000					1.300			0.000	0.03500			20.00									DFN3x2
SI5402DC-T1-E3		N	30	1.0	4.90000					1.300			0.000	0.03500			20.00									DFN3x2
SI5402DC-T1-GE3		N	30	1.0	4.90000					1.300			0.000	0.03500			20.00									DFN3x2
SI5403DC		P	30	20.0	6.00000					6.300			0.000	0.03000			28.00	4.50	7.20							ChipFET,DFN3x2
SI5403DC-T1-GE3		P	30	3.0	6.00000					6.300			0.000	0.03000	1340.0		42.00									DFN3x2