Транзистор PDF Тип Vds, V Vgs, V Idr, A Idm, A Eas,mJ Ear,mJ dV/dt,V/ns P, W t min, °C t max, °C Rth, C Rds, Ohm Ciss, pF Coss, pF Crss, pF Qg, nC Qgs, nC Qgd, nC t on, nS t rise,ns t off,ns t fall,ns t rr, nS Возможные корпуса
SI5433BDCP208.04.8000020.01.300-5515085.0000.0300015.002.403.6012.0025.0080.0055.0030.0DFN3x2
SI5433BDC-T1-E3P208.04.8000020.01.300-5515085.0000.0300015.002.403.6012.0025.0080.0055.0030.0ChipFET,DFN3x2
SI5433BDC-T1-GE3P208.04.8000020.01.300-5515085.0000.0300015.002.403.6012.0025.0080.0055.0030.0ChipFET,DFN3x2
SI5435BDCP3020.05.900002.5000.0000.0450016.002.704.10ChipFET,DFN3x2
SI5435BDC-T1-E3P303.04.300001.3000.0000.0450024.00DFN3x2
SI5435BDC-T1-GE3P303.04.300001.3000.0000.0450024.00DFN3x2
SI5440DCN3020.06.000006.3000.0000.019009.003.502.30ChipFET,DFN3x2
SI5440DC-T1-GE3N302.56.000006.3000.0000.019001200.029.00DFN3x2
SI5441BDC-T1-E3P201.44.400001.3000.0000.0450022.00DFN3x2
SI5441BDC-T1-GE3P201.44.400001.3000.0000.0450022.00DFN3x2
SI5441DC-T1-E3P201.43.900001.3000.0000.0550022.00DFN3x2
SI5441DC-T1-GE3P201.43.900001.3000.0000.0550022.00DFN3x2
SI5443DC-T1-E3P200.63.600001.3000.0000.0650014.00ChipFET
SI5443DC-T1-GE3P200.63.600001.3000.0000.0650014.00ChipFET
SI5445BDC-T1-E3P81.05.200001.3000.0000.0330021.00DFN3x2
SI5445BDC-T1-GE3P81.05.200001.3000.0000.0330021.00DFN3x2
SI5447DC-T1-E3P200.53.500001.3000.0000.0760010.00DFN3x2
SI5447DC-T1-GE3P200.53.500001.3000.0000.0760010.00DFN3x2
SI5449DC-T1-E3P300.63.100001.3000.0000.0850011.00DFN3x2,ChipFET
SI5449DC-T1-GE3P300.63.100001.3000.0000.0850011.00ChipFET,DFN3x2