Транзистор PDF Тип Vds, V Vgs, V Idr, A Idm, A Eas,mJ Ear,mJ dV/dt,V/ns P, W t min, °C t max, °C Rth, C Rds, Ohm Ciss, pF Coss, pF Crss, pF Qg, nC Qgs, nC Qgd, nC t on, nS t rise,ns t off,ns t fall,ns t rr, nS Возможные корпуса
SI5456DUN2020.012.0000031.0000.0000.010009.803.203.20ChipFET
SI5456DU-T1-GE3N202.512.0000031.0000.0000.010001200.030.00DFN3x2
SI5457DCP2012.06.000005.7000.0000.0360025.002.004.00ChipFET,DFN3x2
SI5457DC-T1-GE3P201.46.000005.7000.0000.036001000.038.00ChipFET,DFN3x2
SI5458DUN3020.06.0000010.4000.0000.041002.801.100.80ChipFET
SI5458DU-T1-GE3N303.06.0000010.4000.0000.04100325.09.00DFN3x2
SI5459DUP2012.08.0000010.9000.0000.0520017.002.003.00ChipFET
SI5459DU-T1-GE3P201.48.0000010.9000.0000.05200665.026.00ChipFET
SI5461EDC-T1-E3P200.54.500001.3000.0000.0450020.00ChipFET,DFN3x2
SI5461EDC-T1-GE3P200.54.500001.3000.0000.0450020.00ChipFET,DFN3x2
SI5463EDC-T1-E3P200.53.800001.2500.0000.0620015.00DFN3x2
SI5463EDC-T1-GE3P200.53.800001.2500.0000.0620015.00DFN3x2
SI5468DCN3020.06.000005.7000.0000.028003.801.401.10ChipFET,DFN3x2
SI5468DC-T1-GE3N302.56.000005.7000.0000.02800435.012.00ChipFET,DFN3x2
SI5471DCP2012.06.000006.3000.0000.0200064.006.007.00ChipFET,DFN3x2
SI5471DC-T1-GE3P201.16.000006.3000.0000.020002945.096.00ChipFET,DFN3x2
SI5473DC-T1-E3 P121.05.900001.3000.0000.0270032.00ChipFET,DFN3x2
SI5475BDC-T1-E3P121.06.000006.3000.0000.028001400.040.00ChipFET,DFN3x2
SI5475BDC-T1-GE3P121.06.000006.3000.0000.028001400.040.00ChipFET,DFN3x2
SI5475DC-T1-E3P120.55.500001.3000.0000.0310029.00ChipFET,DFN3x2