Транзистор PDF Тип Vds, V Vgs, V Idr, A Idm, A Eas,mJ Ear,mJ dV/dt,V/ns P, W t min, °C t max, °C Rth, C Rds, Ohm Ciss, pF Coss, pF Crss, pF Qg, nC Qgs, nC Qgd, nC t on, nS t rise,ns t off,ns t fall,ns t rr, nS Возможные корпуса
SI5499DC-T1-E3P80.86.000006.2000.0000.036001290.035.00ChipFET,DFN3x2
SI5499DC-T1-GE3P80.86.000006.2000.0000.036001290.035.00ChipFET,DFN3x2
SI5504BDCN+P3020.04.000003.1200.0000.065002.000.700.70ChipFET,DFN3x2
SI5513CDCN+P2012.04.000003.1000.0000.055002.600.700.50ChipFET,DFN3x2
SI5515CDCN+P208.04.000003.1000.0000.036006.501.100.90ChipFET,DFN3x2
SI5517DUN+P208.06.000008.3000.0000.072005.500.801.50ChipFET
SI5853CDC-T1-E3P201.04.000003.1000.0000.10400350.011.00ChipFET,DFN3x2
SI5853DC-T1-E3 P201.02.700001.1000.0000.110007.70ChipFET,DFN3x2
SI5853DDCP208.04.0000010.03.100-5515077.0000.08500320.060.04.700.651.355.0010.0020.0010.0015.0DFN3x2
SI5853DDC-T1-E3P208.04.0000010.03.100-5515077.0000.08500320.060.04.700.651.355.0010.0020.0010.0015.0ChipFET,DFN3x2
SI5855CDCP208.03.7000010.02.800-5515082.0000.12000276.060.04.100.601.005.0014.0017.008.0023.0DFN3x2
SI5855CDC-T1-E3P208.03.7000010.02.800-5515082.0000.12000276.060.04.100.601.005.0014.0017.008.0023.0ChipFET,DFN3x2
SI5855DC-T1-E3 P201.02.700001.1000.0000.110007.70ChipFET,DFN3x2
SI5856DC-T1-E3 N201.04.400001.1000.0000.040007.50ChipFET,DFN3x2
SI5857DU-T1-E3P201.56.0000010.4000.0000.05800480.017.00ChipFET
SI5857DU-T1-GE3P201.56.0000010.4000.0000.05800480.017.00ChipFET
SI5858DU-T1-E3N201.06.000008.3000.0000.03900520.016.00ChipFET
SI5858DU-T1-GE3N201.06.000008.3000.0000.03900520.016.00ChipFET
SI5902BDCN3020.04.000003.1200.0000.065002.000.700.70ChipFET,DFN3x2
SI5904DCN2012.04.200002.1000.0000.075004.000.601.30ChipFET,DFN3x2