Транзистор PDF Тип Vds, V Vgs, V Idr, A Idm, A Eas,mJ Ear,mJ dV/dt,V/ns P, W t min, °C t max, °C Rth, C Rds, Ohm Ciss, pF Coss, pF Crss, pF Qg, nC Qgs, nC Qgd, nC t on, nS t rise,ns t off,ns t fall,ns t rr, nS Возможные корпуса
SI5906DUN3020.06.0000010.4000.0000.031002.901.001.10ChipFET
SI5908DCN208.05.900002.1000.0000.040005.000.901.00ChipFET,DFN3x2
SI5913DCP2012.04.0000015.03.100-5515062.0000.07000330.080.04.000.801.403.0010.0016.008.0023.0DFN3x2
SI5913DC-T1-E3P2012.04.0000015.03.100-5515062.0000.07000330.080.04.000.801.403.0010.0016.008.0023.0ChipFET,DFN3x2
SI5913DC-T1-GE3P2012.04.0000015.03.100-5515062.0000.07000330.080.04.000.801.403.0010.0016.008.0023.0ChipFET,DFN3x2
SI5933CDCP208.03.700002.8000.0000.144004.100.601.00ChipFET,DFN3x2
SI5935CDCP208.04.000003.1000.0000.100006.200.901.80ChipFET,DFN3x2
SI5944DUN4020.06.0000010.0000.0000.112002.201.200.80ChipFET
SI5980DUN10020.02.500007.8000.0000.567002.201.000.40ChipFET
SI5997DUP3020.06.0000010.4000.0000.054004.801.602.20ChipFET
SI5999EDUP2012.06.0000010.4000.0000.059006.901.601.80ChipFET
SI6404DQ-T1-E3N300.68.600001.0800.0000.0090048.00TSSOP-8
SI6404DQ-T1-GE3N300.68.600001.0800.0000.0090048.00TSSOP-8
SI6410DQN3020.07.800001.5000.0000.0140022.509.007.00TSSOP-8
SI6410DQ-T1-E3N301.01.5000.0000.0140033.00TSSOP-8
SI6410DQ-T1-GE3N301.01.5000.0000.0140033.00TSSOP-8
SI6413DQ-T1-E3P200.87.200001.0500.0000.01000105.00TSSOP-8
SI6413DQ-T1-GE3P200.87.200001.0500.0000.01000105.00TSSOP-8
SI6415DQP3020.06.500001.5000.0000.0190047.009.508.00TSSOP-8
SI6415DQ-T1-E3P301.01.5000.0000.0190070.00TSSOP-8