Транзистор PDF Тип Vds, V Vgs, V Idr, A Idm, A Eas,mJ Ear,mJ dV/dt,V/ns P, W t min, °C t max, °C Rth, C Rds, Ohm Ciss, pF Coss, pF Crss, pF Qg, nC Qgs, nC Qgd, nC t on, nS t rise,ns t off,ns t fall,ns t rr, nS Возможные корпуса
SI5475DC-T1-GE3P120.55.500001.3000.0000.0310029.00ChipFET,DFN3x2
SI5475DDCP128.06.000005.7000.0000.0320020.002.505.50ChipFET,DFN3x2
SI5475DDC-T1-GE3P121.06.000005.7000.0000.032001600.050.00ChipFET,DFN3x2
SI5476DUN6020.012.0000031.0000.0000.0340010.503.504.20ChipFET
SI5476DU-T1-E3N603.012.0000031.0000.0000.034001100.032.00ChipFET
SI5476DU-T1-GE3N603.012.0000031.0000.0000.034001100.032.00DFN3x2
SI5479DU-T1-GE3P121.016.0000017.8000.0000.021001810.051.00ChipFET
SI5480DU-T1-E3N303.012.0000031.0000.0000.016001230.034.00ChipFET
SI5480DU-T1-GE3N303.012.0000031.0000.0000.016001230.034.00ChipFET
SI5481DU-T1-E3P201.012.0000017.8000.0000.022001610.050.00ChipFET
SI5481DU-T1-GE3P201.012.0000017.8000.0000.022001610.050.00ChipFET
SI5482DU-T1-E3N302.012.0000031.0000.0000.015001610.051.00ChipFET
SI5482DU-T1-GE3N302.012.0000031.0000.0000.015001610.051.00ChipFET
SI5484DU-T1-E3N202.012.0000031.0000.0000.016001600.055.00ChipFET
SI5484DU-T1-GE3N202.012.0000031.0000.0000.016001600.055.00ChipFET
SI5485DU-T1-E3P201.512.0000031.0000.0000.025001100.042.00ChipFET
SI5485DU-T1-GE3P201.512.0000031.0000.0000.025001100.042.00ChipFET
SI5486DUN208.012.0000031.0000.0000.0150021.003.303.10ChipFET
SI5486DU-T1-E3N201.012.0000031.0000.0000.015002100.054.00DFN3x2
SI5486DU-T1-GE3N201.012.0000031.0000.0000.015002100.054.00DFN3x2