Транзистор PDF Тип Vds, V Vgs, V Idr, A Idm, A Eas,mJ Ear,mJ dV/dt,V/ns P, W t min, °C t max, °C Rth, C Rds, Ohm Ciss, pF Coss, pF Crss, pF Qg, nC Qgs, nC Qgd, nC t on, nS t rise,ns t off,ns t fall,ns t rr, nS Возможные корпуса
SI5404BDC-T1-E3N201.55.400001.3000.0000.0280011.00DFN3x2
SI5404BDC-T1-GE3N201.55.400001.3000.0000.0280011.00DFN3x2
SI5406CDCN128.06.000005.7000.0000.0200011.501.002.00ChipFET,DFN3x2
SI5406CDC-T1-GE3N121.06.000005.7000.0000.020001100.032.00DFN3x2
SI5406DC-T1-E3N120.66.900001.3000.0000.0200020.00DFN3x2
SI5406DC-T1-GE3N120.66.900001.3000.0000.0200020.00DFN3x2
SI5410DUN4020.012.0000031.0000.0000.0180010.004.503.10ChipFET
SI5410DU-T1-GE3N403.012.0000031.0000.0000.018001350.032.00ChipFET
SI5414DC-T1-GE3N201.56.000006.3000.0000.017001500.041.00DFN3x2
SI5418DUN3020.012.0000031.0000.0000.014509.504.502.70ChipFET
SI5418DU-T1-GE3N303.012.0000031.0000.0000.014501350.030.00ChipFET
SI5419DUP3020.012.0000031.0000.0000.0200030.004.507.50ChipFET
SI5419DU-T1-GE3P302.512.0000031.0000.0000.020001400.045.00DFN3x2
SI5424DCN3025.06.000009.0000.0000.0240011.003.204.20ChipFET,DFN3x2
SI5424DC-T1-E3N302.36.000006.2500.0000.02400950.032.00DFN3x2
SI5424DC-T1-GE3N302.36.000006.2500.0000.02400950.032.00DFN3x2
SI5429DUP3020.012.0000050.031.000-551503.0000.012202320.0275.020.006.306.3010.0010.0040.0010.0010.0ChipFET
SI5429DU-T1-GE3P3020.012.0000050.031.000-551503.0000.012202320.0275.020.006.306.3010.0010.0040.0010.0010.0ChipFET
SI5432DCN2012.06.000006.3000.0000.0200010.002.501.70ChipFET,DFN3x2
SI5432DC-T1-GE3N201.56.000006.3000.0000.020001200.033.00DFN3x2