Транзистор PDF Тип Vce, V Vge,V Ic, A Ic max, A P, W t min,C t max,C Rth,C Vce sat. V Cies,pF Coes,pF Cres,pF t on, nS t rise, nS t off, nS t fall, nS Eon,mJ Eoff,mJ Etot,mJ Qg, nC Qgc,nC Qge,nC t rr,nS Qrr, nC Возможные корпуса
IGB20N60H3Single600.020.040.00080.0170.000-401750.881.951100.070.032.016.0020.00194.0011.000.4500.2400.690120.0TO-263
IGB30N60H3Single600.020.060.000120.0187.000-401750.801.951630.0107.050.018.0022.00207.0022.000.7300.4401.170165.0TO-263
IGB30N60T-600.060.00090.0187.0001.5023.0021.00254.0046.000.6900.770167.0TO-263
IGB50N60T-600.0100.000150.0333.0001.5026.0029.00299.0029.001.2001.400310.0TO-263
IGC03R60DSingle600.020.02.5007.5-401751.65248.015.07.0
IGC03R60DE-600.02.5001752.10Chip
IGC04R60DSingle600.020.04.00012.0-401751.65305.018.09.0
IGC04R60DE-600.04.0001752.10Chip
IGC05R60DSingle600.020.06.00018.0-401752.10470.024.014.0
IGC05R60DE-600.06.0001752.10Chip
IGC06R60DSingle600.020.08.00024.0-401752.10775.046.023.0
IGC06R60DE-600.08.0001752.10Chip
IGC07R60DSingle600.020.010.00030.0-401752.10655.037.022.0
IGC07R60DE-600.010.0001752.10Chip
IGC07T120T6LSingle1200.020.04.00012.0-401752.10250.025.015.0
IGC07T120T8L-1200.04.0001752.02Chip
IGC100T65T8RM-650.0200.0001751.23Chip
IGC109T120T6RHSingle1200.020.0110.000330.0-401751.706800.0440.0375.0175.00
IGC109T120T6RLSingle1200.020.0110.000330.0-401751.806800.0440.0375.0
IGC109T120T6RMSingle1200.020.0110.000330.0-401751.806800.0440.0375.0