Транзистор PDF Тип Vce, V Vge,V Ic, A Ic max, A P, W t min,C t max,C Rth,C Vce sat. V Cies,pF Coes,pF Cres,pF t on, nS t rise, nS t off, nS t fall, nS Eon,mJ Eoff,mJ Etot,mJ Qg, nC Qgc,nC Qge,nC t rr,nS Qrr, nC Возможные корпуса
SIGC10T60SE-600.020.0001502.05Chip
SIGC10T65E-650.020.0001751.87Chip
SIGC11T60NCSingle600.020.010.00030.0-551502.00550.062.042.020.008.00110.0020.00
SIGC11T60SNCSingle600.020.010.00030.0-551502.00550.062.042.028.0012.00198.0026.00Chip
SIGC121T120R2CSingle1200.020.075.000225.0-551502.505100.0720.0380.070.0070.00
SIGC121T120R2CLSingle1200.020.075.000225.0-551502.205100.0330.060.0050.00350.0070.00Die
SIGC121T120R2CSSingle1200.020.075.000225.0-551503.205100.0720.0380.0130.0060.00360.0030.00Chip
SIGC121T60NR2CSingle600.020.0150.000450.0-551502.006500.0600.0125.0030.00225.0035.00Chip
SIGC128T170R3Single1700.020.0100.000300.0-401502.008815.0292.050.00300.00Chip
SIGC128T170R3E-1700.0100.0001502.40Chip
SIGC12T120-1200.08.0002.1030.0090.00Chip
SIGC12T120E-1200.08.0001502.10Chip
SIGC12T120LSingle1200.020.08.00024.0-551501.70600.036.028.040.0026.00570.00140.00Chip
SIGC12T120LE-1200.08.0001502.1026.00140.00Chip
SIGC12T60NCSingle600.020.010.00030.0-551502.00450.040.021.008.00110.0025.00
SIGC12T60SNCSingle600.020.010.00030.0-551502.00580.070.050.029.0021.00266.0063.00Chip
SIGC144T170R2CSingle1700.020.075.000225.0-551502.705000.0100.0030.00Chip
SIGC14T60NCSingle600.020.015.00045.0-551502.00675.060.021.008.00110.0025.00
SIGC14T60SNCSingle600.020.015.00045.0-551502.00800.084.052.031.0023.00261.0054.00Chip
SIGC156T120R2CSingle1200.020.0100.000300.0-551502.506500.01000.0500.080.0070.00