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Транзистор	PDF	Тип	Vce, V	Vge,V	Ic, A	Ic max, A	P, W	t min,C	t max,C	Rth,C	Vce sat. V	Cies,pF	Coes,pF	Cres,pF	t on, nS	t rise, nS	t off, nS	t fall, nS	Eon,mJ	Eoff,mJ	Etot,mJ	Qg, nC	Qgc,nC	Qge,nC	t rr,nS	Qrr, nC	Возможные корпуса
SIGC06T65GE		-																									Chip
SIGC07T60NC		Single	600.0	20.0	6.000	18.0		-55	150		2.00	222.0		20.0	21.00	8.00	110.00	25.00
SIGC07T60SNC		-	600.0	20.0	6.000	18.0		-55	150		2.00	350.0	38.0	23.0	24.00	17.00	248.00	70.00
SIGC07T60UN		Single	600.0	20.0	6.000	18.0		-55	150		2.80	350.0	50.0	23.0	8.00	3.00	63.00	59.00									Chip
SIGC08T60		Single	600.0	20.0	15.000	45.0		-40	175		1.50	860.0	55.0	24.0	14.00	11.00	110.00	85.00
SIGC08T60E		-	600.0		15.000				150		1.90																Chip
SIGC08T60S		Single	600.0	20.0	15.000	45.0		-40	150		1.50	860.0	55.0	24.0		15.00		79.00									Chip
SIGC08T60SE		-	600.0		15.000				150		2.05																Chip
SIGC08T65E		-	650.0		15.000				175		1.87																Chip
SIGC100T60R3		Single	600.0	20.0	200.000	600.0		-40	150		1.45	12335.0	769.0	366.0		30.00		60.00									Chip
SIGC100T60R3E		-	600.0		200.000				150		1.85																Chip
SIGC100T65R3E		-	650.0		200.000				175		1.20																Chip
SIGC101T170R3		Single	1700.0	20.0	75.000	225.0		-40	150		2.00	6638.0		220.0		50.00		300.00									Chip
SIGC101T170R3E		-	1700.0		75.000				150		2.40																Chip
SIGC104T170R2C		Single	1700.0	20.0	50.000	150.0		-55	150		2.70				100.00	100.00	90.00	30.00									Chip
SIGC109T120R3		-	1200.0		100.000						2.10					45.00		90.00
SIGC109T120R3E		-	1200.0		100.000				150		2.10																Chip
SIGC109T120R3L		Single	1200.0	20.0	100.000	300.0		-55	150		1.70	7210.0		327.0		50.00		90.00									Chip
SIGC109T120R3LE		-	1200.0		100.000				150		2.10																Chip
SIGC10T60E		-	600.0		20.000				150		1.90																Chip